probing the nature of annealing silicon carbide samples for solar cell

نویسندگان

ahmad zatirostami

khikmat muminov

a. kholov

چکیده

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Probing the Nature of Annealing Silicon Carbide Samples for Solar Cell

SiC powder preparation using Sol-Gel method. The size of nano-particles grows as the temperature exceeds 900° C. Size of probable agglomerations produced, is approximately less than 50nm. The surface is suitable to be used for dye solar cells. SiC emission occurs at wavelength area of 11.3μm or wave number area of 884.95 cm-1. In this paper probing the nature of annealed SiC samples in mixture,...

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In this paper, we show that the kinetics of annealing of light-induced defects in microcrystalline silicon is similar to that of amorphous silicon. Dilution series of pin and nip single-junction microcrystalline silicon (μc-Si:H) solar cells were light-soaked (AM 1.5, 1000h at 50°C). Their relative efficiency loss between initial and degraded states depends on the i-layer crystallinity. Subsequ...

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Effect of Annealing on Physical Properties of Cu2ZnSnS4 (CZTS) Thin Films for Solar Cell Applications

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عنوان ژورنال:
quarterly journal of applied chemical research

ناشر: islamic azad university, karaj branch

ISSN 2008-3815

دوره 7

شماره 4 2013

کلمات کلیدی

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